New 2D Transistors lay foundation for faster electronics

New 2D Transistors lay foundation for faster electronics

Electronics
Electronic device architectures may soon become a lot faster as researchers have now unveiled the world's first fully two-dimensional field-effect transistor (FET) that provides high electron mobility even under high voltages. Unlike conventional FETs made from silicon, these 2D FETs suffer no performance drop-off under high voltages and provide high electron mobility, even when scaled to a monolayer in thickness. "The results demonstrate the promise of using an all-layered material system for future electronic applications," said Ali Javey, a professor of electrical engineering and computer science at University of California, Berkeley in the US. The 2D heterostructures were fabricated from layers of a transition metal dichalcogenide, hexagonal boron nitride and graphene stacked via van der Waals interactions, or relatively weak electric forces that attract neutral molecules to one another in…
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